Two-terminal memristors have emerged as a basic circuit element for neuromorphic computing and non-Boolean logic. Recently, two-dimensional (2D) materials such as MoS₂ have shown promise for memristor technology, in both lateral and vertical geometries (see Figure) [1][2]. The memristive behavior of these devices has been correlated with field-driven grain boundary motion in 2D materials, although a detailed understanding of this process remains elusive. Alternative realizations may rely on piezoresistive or ferroelectric effects, as well as phase change processes in 2D materials.

Schematic drawings of a (a) lateral and (b) vertical memristor based on grain boundaries in MoS₂. (c) IV characteristic of a metal/MoS₂/metal junction, showing memristive behavior.

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